unisonic technologies co., ltd ut3006 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-636.a 55a, 30v n-channel enhancement mode power mosfet ? description the utc ut3006 is an n-channel enhancement mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , cost-effectiveness and hi gh switching speed. this utc ut3006 is suitable for dc/dc converters, etc. ? features * r ds(on) <9m ? @ v gs =10v,i d =30a * high switching speed ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT3006L-TN3-R ut3006g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
ut3006 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-636.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v t c =25c 55 a continuous v gs @10v t c =100c i d 39 a drain current pulsed (note 2) i dm 160 a power dissipation (t c =25c) p d 50 w junction temperature t j +175 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse test. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 3 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 10 a forward v ds =0v, v gs =+20v +100 na gate- source leakage current reverse i gss v ds =0v, v gs =-20v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =30a 9 m ? static drain-source on-state resistance (note) r ds(on) v gs =4.5v, i d =20a 16 m ? forward transconductance g fs v ds =10v, i d =30a 42 s dynamic parameters input capacitance c iss 700 1120 pf output capacitance c oss 215 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 155 pf switching parameters total gate charge (note) q g 13 21 nc gate to source charge q gs 2.5 nc gate to drain charge q gd v gs =4.5v, v ds =24v, i d =30a 9.5 nc gate resistance r g f=1.0mhz 1.9 ? turn-on delay time (note) t d(on) 8 ns rise time t r 85 ns turn-off delay time t d(off) 20.5 ns fall-time t f v ds =15v, i d =30a, r g =3.3 ? , v gs =10v, r d =0.5 ? 10 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =30a, v gs =0v 1.2 v body diode reverse recovery time (note) t rr 23 ns body diode reverse recovery charge q rr i s =10a, v gs =0v, di/dt=100a/s 14 c note: pulse test.
ut3006 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-636.a ? test circuits and waveforms v g 4.5v charge q g v ds 90% 10% v gs t d(on) t r t d(off) t f switching time waveform q gd q gs q gate charge waveform utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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